Технічний опис DI028N10PQ2-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 18A, Pulsed drain current: 130A, Power dissipation: 32.7W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, кількість в упаковці: 1 шт.
Інші пропозиції DI028N10PQ2-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DI028N10PQ2-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Pulsed drain current: 130A Power dissipation: 32.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
||
| DI028N10PQ2-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Pulsed drain current: 130A Power dissipation: 32.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |