DI035P04PT-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, -40V, -35A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET, POWERQFN 3X3, -40V, -35A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 42.16 грн |
| 10+ | 34.4 грн |
| 100+ | 23.96 грн |
| 500+ | 17.55 грн |
| 1000+ | 14.27 грн |
| 2000+ | 12.76 грн |
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Технічний опис DI035P04PT-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, -40V, -35A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції DI035P04PT-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DI035P04PT-AQ | Виробник : Diotec Semiconductor |
 MOSFET, PowerQFN 3x3, -40V, -35A, 0, 25W |
товар відсутній |
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| DI035P04PT-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Drain-source voltage: -40V Drain current: -35A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 25W кількість в упаковці: 1 шт |
товар відсутній |
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DI035P04PT-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, -40V, -35A Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |
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DI035P04PT-AQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 3x3, -40V, -35A, P, 25W |
товар відсутній |
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| DI035P04PT-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -120A; 25W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Drain-source voltage: -40V Drain current: -35A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 25W |
товар відсутній |