DI045N03PT-AQ Diotec Semiconductor
Виробник: Diotec SemiconductorDI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-MOSFETID25°C= 45 ARDS(on) 3.4 mΩTjmax= 150°CVDSS= 30 VPD= 16 WEAS= 55 mJ AEC-Q
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
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Технічний опис DI045N03PT-AQ Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DI045N03PT-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DI045N03PT-AQ | Виробник : Diotec Semiconductor |
Trans MOSFET N-CH 30V 45A Automotive 8-Pin QFN EP T/R |
товар відсутній |
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| DI045N03PT-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 280A Power dissipation: 16W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 5000 шт |
товар відсутній |
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DI045N03PT-AQ | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Qualification: AEC-Q101 |
товар відсутній |
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DI045N03PT-AQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N, AEC-Q101 |
товар відсутній |
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| DI045N03PT-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 280A Power dissipation: 16W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |