DI048N04PQ2-AQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.84 грн |
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Технічний опис DI048N04PQ2-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, 40V, 48A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V, Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DI048N04PQ2-AQ за ціною від 23.57 грн до 63.55 грн
| Фото | Назва | Виробник | Інформація |
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DI048N04PQ2-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET, POWERQFN 5X6, 40V, 48A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PQ2-AQ | Виробник : Diotec Semiconductor |
MOSFET, PowerQFN 5x6, 40V, 48A, N, 28W |
на замовлення 4700 шт: термін постачання 21-31 дні (днів) |
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| DI048N04PQ2-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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DI048N04PQ2-AQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N, AEC-Q101 |
товар відсутній |
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| DI048N04PQ2-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |