DI048N04PQ2 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис DI048N04PQ2 DIOTEC SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 30A, Pulsed drain current: 200A, Power dissipation: 22.7W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 11.5mΩ, Mounting: SMD, Gate charge: 48nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції DI048N04PQ2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DI048N04PQ2 | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N |
товар відсутній |
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| DI048N04PQ2 | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |