DI050N06D1-AQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET DPAK N 60V 50A 0.0085OHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 20.47 грн |
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Технічний опис DI050N06D1-AQ Diotec Semiconductor
Description: MOSFET DPAK N 60V 50A 0.0085OHM, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V.
Інші пропозиції DI050N06D1-AQ за ціною від 20.77 грн до 54.3 грн
| Фото | Назва | Виробник | Інформація |
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DI050N06D1-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET DPAK N 60V 50A 0.0085OHM Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| DI050N06D1-AQ | Виробник : Diotec Semiconductor |
N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 compliant |
товар відсутній |
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DI050N06D1-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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DI050N06D1-AQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, DPAK, 60V, 50A, 150C, N, AEC-Q101 |
товар відсутній |
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DI050N06D1-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |