DI087N03D1-AQ DIOTEC SEMICONDUCTOR


Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 420A; 41.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 420A
Power dissipation: 41.67W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис DI087N03D1-AQ DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 420A; 41.67W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 55A, Pulsed drain current: 420A, Power dissipation: 41.67W, Case: DPAK; TO252AA, Gate-source voltage: ±20V, On-state resistance: 3.7mΩ, Mounting: SMD, Gate charge: 39nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, кількість в упаковці: 1 шт.

Інші пропозиції DI087N03D1-AQ

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
DI087N03D1-AQ Виробник : DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 420A; 41.67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 420A
Power dissipation: 41.67W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній