DI0A4N45SQ2 Diotec Semiconductor
на замовлення 3980 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.01 грн |
| 10+ | 48.91 грн |
| 100+ | 25.5 грн |
| 500+ | 25.3 грн |
| 1000+ | 24.43 грн |
| 2000+ | 21.63 грн |
| 4000+ | 20.3 грн |
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Технічний опис DI0A4N45SQ2 Diotec Semiconductor
Description: MOSFET SO-8 N 450V 4.5OHM 150C, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 450V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V, Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DI0A4N45SQ2
| Фото | Назва | Виробник | Інформація |
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DI0A4N45SQ2 | Виробник : Diotec Semiconductor |
 Description: MOSFET SO-8 N 450V 4.5OHM 150CPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
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DI0A4N45SQ2 | Виробник : Diotec Semiconductor |
Description: MOSFET SO-8 N 450V 4.5OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |