DI280N10TL Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET TOLL N 100V 0.002OHM 175C
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 425mW (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.59 грн |
| 10+ | 224 грн |
| 100+ | 181.18 грн |
| 500+ | 151.14 грн |
| 1000+ | 129.41 грн |
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Технічний опис DI280N10TL Diotec Semiconductor
Description: MOSFET TOLL N 100V 0.002OHM 175C, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 280A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 425mW (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V.
Інші пропозиції DI280N10TL за ціною від 197.61 грн до 616.87 грн
| Фото | Назва | Виробник | Інформація |
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DI280N10TL | Виробник : Diotec Semiconductor |
MOSFET MOSFET, TOLL, 100V, 280A, 175C, N |
на замовлення 1791 шт: термін постачання 21-30 дні (днів) |
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| DI280N10TL | Виробник : Diotec Semiconductor |
MOSFET, TOLL, 100V, 280A, 150C, N |
товар відсутній |
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| DI280N10TL | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 194A Pulsed drain current: 1.2kA Power dissipation: 425W Case: HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DI280N10TL | Виробник : Diotec Semiconductor |
Description: MOSFET TOLL N 100V 0.002OHM 175C Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 425mW (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V |
товар відсутній |
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| DI280N10TL | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 194A Pulsed drain current: 1.2kA Power dissipation: 425W Case: HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |