Технічний опис DKI04046 Sanken Electric Co.
Description: MOSFET N-CH 40V 48A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 650µA, Supplier Device Package: TO-252, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V.
Інші пропозиції DKI04046
| Фото | Назва | Виробник | Інформація |
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DKI04046 | Виробник : Sanken Electric USA Inc. |
 Description: MOSFET N-CH 40V 48A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 650µA Supplier Device Package: TO-252 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товар відсутній |
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DKI04046 | Виробник : Sanken Electric USA Inc. |
Description: MOSFET N-CH 40V 48A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 650µA Supplier Device Package: TO-252 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товар відсутній |