DMJ70H600SH3 DIODES INCORPORATED


Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис DMJ70H600SH3 DIODES INCORPORATED

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 7A, Pulsed drain current: 11A, Power dissipation: 45W, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 0.6Ω, Mounting: THT, Gate charge: 18.2nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.

Інші пропозиції DMJ70H600SH3

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
DMJ70H600SH3 Виробник : Diodes Inc. / Pericom DMJ70H600SH3-1142507.pdf MOSFET MOSFETBVDSS: 651V-800V
товар відсутній
DMJ70H600SH3 Виробник : DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7A; Idm: 11A; 45W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7A
Pulsed drain current: 11A
Power dissipation: 45W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18.2nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній