на замовлення 1656 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.2 грн |
| 10+ | 52.77 грн |
| 100+ | 34.43 грн |
| 500+ | 30.77 грн |
| 1000+ | 25.97 грн |
| 3000+ | 21.98 грн |
| 6000+ | 21.18 грн |
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Технічний опис DMN1001UCA10-7 Diodes Incorporated
Description: MOSFET 2N-CH 12V 20A X2-TSN1820, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V, Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V, Vgs(th) (Max) @ Id: 1.4V @ 870µA, Supplier Device Package: X2-TSN1820-10.
Інші пропозиції DMN1001UCA10-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMN1001UCA10-7 | Виробник : Diodes Inc |
 N-Channel Enhancement Mode MOSFET |
товар відсутній |
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| DMN1001UCA10-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W Mounting: SMD Drain-source voltage: 12V Drain current: 16A On-state resistance: 6.9mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Gate-source voltage: ±8V Pulsed drain current: 90A Kind of channel: enhanced Case: X2-TSN1820-10 кількість в упаковці: 3000 шт |
товар відсутній |
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| DMN1001UCA10-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 12V 20A X2-TSN1820 Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V Vgs(th) (Max) @ Id: 1.4V @ 870µA Supplier Device Package: X2-TSN1820-10 |
товар відсутній |
||
| DMN1001UCA10-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W Mounting: SMD Drain-source voltage: 12V Drain current: 16A On-state resistance: 6.9mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Gate-source voltage: ±8V Pulsed drain current: 90A Kind of channel: enhanced Case: X2-TSN1820-10 |
товар відсутній |