на замовлення 1250000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 8.21 грн |
| 20000+ | 7.15 грн |
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Технічний опис DMN1008UFDF-13 Diodes Inc
Description: MOSFET N-CH 12V 12.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V, Qualification: AEC-Q101.
Інші пропозиції DMN1008UFDF-13 за ціною від 8.45 грн до 8.45 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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DMN1008UFDF-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 8V-24V |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DMN1008UFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 12V 12.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Qualification: AEC-Q101 |
на замовлення 550000 шт: термін постачання 21-31 дні (днів) |
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DMN1008UFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 12V 12.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 559615 шт: термін постачання 21-31 дні (днів) |
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| DMN1008UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товар відсутній |
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| DMN1008UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 |
товар відсутній |