Технічний опис DMN1008UFDFQ-13 Diodes Inc
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V, Power Dissipation (Max): 700mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V.
Інші пропозиції DMN1008UFDFQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMN1008UFDFQ-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товар відсутній |
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| DMN1008UFDFQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V |
товар відсутній |
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| DMN1008UFDFQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K |
товар відсутній |
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| DMN1008UFDFQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 |
товар відсутній |