DMN1016UCB6-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
на замовлення 3520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.1 грн |
| 10+ | 38.22 грн |
| 100+ | 28.55 грн |
| 500+ | 21.05 грн |
| 1000+ | 16.27 грн |
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Технічний опис DMN1016UCB6-7 Diodes Incorporated
Description: MOSFET N-CH 12V 5.5A U-WLB1510-6, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 920mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-WLB1510-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V.
Інші пропозиції DMN1016UCB6-7 за ціною від 22.51 грн до 51.67 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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DMN1016UCB6-7 | Виробник : Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A |
на замовлення 849 шт: термін постачання 21-30 дні (днів) |
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DMN1016UCB6-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 12V 5.5A U-WLB1510-6 Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V Power Dissipation (Max): 920mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1510-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V |
товар відсутній |