DMN1029UFDB-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.55 грн |
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Технічний опис DMN1029UFDB-7 Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Інші пропозиції DMN1029UFDB-7 за ціною від 5.92 грн до 33.25 грн
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DMN1029UFDB-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 12V 5.6A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 149772 шт: термін постачання 21-31 дні (днів) |
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DMN1029UFDB-7 | Виробник : Diodes Incorporated |
MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC |
на замовлення 16200 шт: термін постачання 21-30 дні (днів) |
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| DMN1029UFDB-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Mounting: SMD Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 65mΩ Power dissipation: 1.4W Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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| DMN1029UFDB-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Mounting: SMD Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 65mΩ Power dissipation: 1.4W Polarisation: unipolar |
товар відсутній |