DMN10H220L-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 8.23 грн |
30000+ | 7.74 грн |
50000+ | 7.55 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN10H220L-13 Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V.
Інші пропозиції DMN10H220L-13 за ціною від 7.72 грн до 30.38 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMN10H220L-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
DMN10H220L-13 | Виробник : Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W |
на замовлення 8884 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
DMN10H220L-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V 1.4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
DMN10H220L-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R |
товар відсутній |
||||||||||||||||||
DMN10H220L-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
||||||||||||||||||
DMN10H220L-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |