DMN10H220LVT-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
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Технічний опис DMN10H220LVT-13 Diodes Incorporated
Description: MOSFET N-CH 100V 1.87A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, Power Dissipation (Max): 1.67W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V.
Інші пропозиції DMN10H220LVT-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMN10H220LVT-13 | Виробник : Diodes Incorporated |
MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs |
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