DMN1150UFB-7B Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 12V 1.41A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 4.24 грн |
| 30000+ | 4 грн |
| 50000+ | 3.31 грн |
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Технічний опис DMN1150UFB-7B Diodes Incorporated
Description: MOSFET N-CH 12V 1.41A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V.
Інші пропозиції DMN1150UFB-7B за ціною від 3.66 грн до 29.6 грн
| Фото | Назва | Виробник | Інформація |
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DMN1150UFB-7B | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 12V 1.41A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V |
на замовлення 257659 шт: термін постачання 21-31 дні (днів) |
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DMN1150UFB-7B | Виробник : Diodes Incorporated |
MOSFET N-CH MOSFET 12V |
на замовлення 19099 шт: термін постачання 21-30 дні (днів) |
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| DMN1150UFB-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Case: X1-DFN1006-3 Drain-source voltage: 12V Drain current: 1.15A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 7A кількість в упаковці: 10000 шт |
товар відсутній |
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| DMN1150UFB-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Case: X1-DFN1006-3 Drain-source voltage: 12V Drain current: 1.15A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 7A |
товар відсутній |