Технічний опис DMN1150UFL3-7 Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1310-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN1150UFL3-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMN1150UFL3-7 | Виробник : Diodes Zetex |
 Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R |
товар відсутній |
|
 |
DMN1150UFL3-7 | Виробник : Diodes Inc |
Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R |
товар відсутній |
|
| DMN1150UFL3-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6 Drain-source voltage: 12V Drain current: 1.6A On-state resistance: 0.21Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±6V Mounting: SMD Case: X2-DFN1310-6 кількість в упаковці: 5 шт |
товар відсутній |
||
 |
DMN1150UFL3-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 12V 2A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
|
|
DMN1150UFL3-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 12V 2A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
| DMN1150UFL3-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6 Drain-source voltage: 12V Drain current: 1.6A On-state resistance: 0.21Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±6V Mounting: SMD Case: X2-DFN1310-6 |
товар відсутній |