DMN2004WKQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 20V 540MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.7 грн |
| 13+ | 21.85 грн |
| 100+ | 11.03 грн |
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Технічний опис DMN2004WKQ-7 Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN2004WKQ-7 за ціною від 5.33 грн до 32.55 грн
| Фото | Назва | Виробник | Інформація |
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DMN2004WKQ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
на замовлення 10711 шт: термін постачання 21-30 дні (днів) |
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| DMN2004WKQ-7 | Виробник : Diodes Inc |
N-Channel Enhancement Mode MOSFET |
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DMN2004WKQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 5 шт |
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DMN2004WKQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 540MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
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DMN2004WKQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
товар відсутній |