Технічний опис DMN2005UFGQ-13 Diodes Inc
Description: MOSFET N-CH 20V 18A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 1.05W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMN2005UFGQ-13
| Фото | Назва | Виробник | Інформація |
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| DMN2005UFGQ-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 14A Pulsed drain current: 130A Power dissipation: 2.27W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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DMN2005UFGQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 18A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V Qualification: AEC-Q101 |
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DMN2005UFGQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
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| DMN2005UFGQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 14A Pulsed drain current: 130A Power dissipation: 2.27W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhanced |
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