DMN2011UFDE-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 20V 11.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.84 грн |
| 6000+ | 14.45 грн |
| 9000+ | 13.38 грн |
| 30000+ | 12.43 грн |
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Технічний опис DMN2011UFDE-7 Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 610mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V.
Інші пропозиції DMN2011UFDE-7 за ціною від 13.32 грн до 45.53 грн
| Фото | Назва | Виробник | Інформація |
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DMN2011UFDE-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 11.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V |
на замовлення 131560 шт: термін постачання 21-31 дні (днів) |
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DMN2011UFDE-7 | Виробник : Diodes Incorporated |
MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W |
на замовлення 75295 шт: термін постачання 21-30 дні (днів) |
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| DMN2011UFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Kind of package: reel; tape Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
товар відсутній |
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| DMN2011UFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Kind of package: reel; tape Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V |
товар відсутній |