DMN2011UFDF-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 20V 14.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 9.09 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN2011UFDF-13 Diodes Incorporated
Description: MOSFET N-CH 20V 14.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V.
Інші пропозиції DMN2011UFDF-13 за ціною від 8.7 грн до 30.26 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2011UFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 14.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V |
на замовлення 29786 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| DMN2011UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 10000 шт |
товар відсутній |
||||||||||||||||||
 |
DMN2011UFDF-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K |
товар відсутній |
|||||||||||||||||
| DMN2011UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V |
товар відсутній |