DMN2011UFX-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 12.2A 4VDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN2050-4
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.73 грн |
| 6000+ | 18.91 грн |
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Технічний опис DMN2011UFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN, Packaging: Tape & Reel (TR), Package / Case: 4-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: V-DFN2050-4, Part Status: Active.
Інші пропозиції DMN2011UFX-7 за ціною від 17.65 грн до 59.98 грн
| Фото | Назва | Виробник | Інформація |
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DMN2011UFX-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 12.2A 4VDFN Packaging: Cut Tape (CT) Package / Case: 4-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN2050-4 Part Status: Active |
на замовлення 7101 шт: термін постачання 21-31 дні (днів) |
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DMN2011UFX-7 | Виробник : Diodes Incorporated |
MOSFET Dual N-Ch Enh FET 20Vds 12Vgs 2248pF |
на замовлення 5945 шт: термін постачання 21-30 дні (днів) |
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| DMN2011UFX-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Case: V-DFN2050-4 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 9.8A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 3000 шт |
товар відсутній |
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| DMN2011UFX-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Case: V-DFN2050-4 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 9.8A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V |
товар відсутній |