DMN2016UTS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 8.58A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.58A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
на замовлення 122500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.53 грн |
| 5000+ | 12.36 грн |
| 12500+ | 11.48 грн |
| 25000+ | 10.53 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN2016UTS-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 8.58A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 8.58A, Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-TSSOP.
Інші пропозиції DMN2016UTS-13 за ціною від 12.05 грн до 43.35 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2016UTS-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 8.58A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.58A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP |
на замовлення 124015 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DMN2016UTS-13 | Виробник : Diodes Incorporated |
MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS |
на замовлення 10583 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| DMN2016UTS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.73A Pulsed drain current: 36A Power dissipation: 0.88W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
| DMN2016UTS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.73A Pulsed drain current: 36A Power dissipation: 0.88W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |