DMN2019UTS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 5.4A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 780mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 8.93 грн |
| 5000+ | 8.16 грн |
| 12500+ | 7.58 грн |
| 25000+ | 6.95 грн |
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Технічний опис DMN2019UTS-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.4A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 780mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active.
Інші пропозиції DMN2019UTS-13 за ціною від 7.97 грн до 28.83 грн
| Фото | Назва | Виробник | Інформація |
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DMN2019UTS-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.4A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
на замовлення 40246 шт: термін постачання 21-31 дні (днів) |
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DMN2019UTS-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5 |
на замовлення 2357 шт: термін постачання 21-30 дні (днів) |
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| DMN2019UTS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.3A Pulsed drain current: 30A Power dissipation: 0.78W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| DMN2019UTS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.3A Pulsed drain current: 30A Power dissipation: 0.78W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |