DMN2022UNS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 10.7A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис DMN2022UNS-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXB).
Інші пропозиції DMN2022UNS-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMN2022UNS-13 | Виробник : Diodes Incorporated |
MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W |
товар відсутній |