Технічний опис DMN2024UFDF-13 Diodes Inc
Description: MOSFET N-CH 20V 7.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V, Power Dissipation (Max): 960mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V.
Інші пропозиції DMN2024UFDF-13
| Фото | Назва | Виробник | Інформація |
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| DMN2024UFDF-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 1.67W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN2024UFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 7.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V |
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DMN2024UFDF-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
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| DMN2024UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 1.67W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced |
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