DMN2024UFU-13 Diodes Incorporated


DMN2024UFU.pdf Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A/21A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 810mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
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Технічний опис DMN2024UFU-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 7.5A/21A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 810mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V, Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.

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DMN2024UFU-13 Виробник : Diodes Incorporated DIOD_S_A0012994332_1-2543764.pdf MOSFET MOSFET BVDSS: 8V-24V U-DFN2030-6 T&R 10K
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