Технічний опис DMN2024UVT-13 Diodes Inc
Description: MOSFET 2N-CH 20V 7A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TSOT-23-6.
Інші пропозиції DMN2024UVT-13
| Фото | Назва | Виробник | Інформація |
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| DMN2024UVT-13 | Виробник : Diodes Zetex |
 High Enhancement Mode MOSFET |
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DMN2024UVT-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN2024UVT-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7A TSOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-23-6 |
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DMN2024UVT-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
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DMN2024UVT-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced |
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