Технічний опис DMN2026UVT-13 Diodes Inc
Description: MOSFET N-CH 20V 6.2A TSOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V, Power Dissipation (Max): 1.15W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V.
Інші пропозиції DMN2026UVT-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMN2026UVT-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 20A Power dissipation: 1.75W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMN2026UVT-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A TSOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V |
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DMN2026UVT-13 | Виробник : Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 20A |
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DMN2026UVT-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 20A; 1.75W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 20A Power dissipation: 1.75W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |