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DMN2027LK3-13

DMN2027LK3-13 Diodes Inc


368dmn2027lk3.pdf Виробник: Diodes Inc
Trans MOSFET N-CH 20V 11.6A 3-Pin(2+Tab) DPAK T/R
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Технічний опис DMN2027LK3-13 Diodes Inc

Description: MOSFET N-CH 20V 11.6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V, Power Dissipation (Max): 2.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V.

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DMN2027LK3-13 DMN2027LK3-13 Виробник : Diodes Incorporated DMN2027LK3-13.pdf Description: MOSFET N-CH 20V 11.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V
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