DMS2085LSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Description: MOSFET P-CH 20V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
на замовлення 87500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
13+ | 22.99 грн |
16+ | 17.58 грн |
100+ | 10.55 грн |
500+ | 9.16 грн |
1000+ | 6.23 грн |
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Технічний опис DMS2085LSD-13 Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V.
Інші пропозиції DMS2085LSD-13 за ціною від 5.38 грн до 25.96 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMS2085LSD-13 | Виробник : Diodes Incorporated | MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr |
на замовлення 4670 шт: термін постачання 21-30 дні (днів) |
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DMS2085LSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 3.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V |
на замовлення 87500 шт: термін постачання 21-31 дні (днів) |
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DMS2085LSD-13 | Виробник : DIODES INCORPORATED | DMS2085LSD-13 SMD P channel transistors |
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