DMS3014SFGQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 9.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 18.19 грн |
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Технічний опис DMS3014SFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 30V 9.5A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V.
Інші пропозиції DMS3014SFGQ-7 за ціною від 18.14 грн до 47.42 грн
| Фото | Назва | Виробник | Інформація |
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DMS3014SFGQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 9.5A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V |
на замовлення 11708 шт: термін постачання 21-31 дні (днів) |
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| DMS3014SFGQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Mounting: SMD Polarisation: unipolar Power dissipation: 1.69W Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 6A Case: SOT223 Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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DMS3014SFGQ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
товар відсутній |
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| DMS3014SFGQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223 Mounting: SMD Polarisation: unipolar Power dissipation: 1.69W Kind of package: reel; tape Kind of channel: enhanced Pulsed drain current: 6A Case: SOT223 Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.25Ω Type of transistor: N-MOSFET |
товар відсутній |