DMT10H010LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 39.1 грн |
5000+ | 35.86 грн |
12500+ | 34.2 грн |
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Технічний опис DMT10H010LSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.
Інші пропозиції DMT10H010LSS-13 за ціною від 37.54 грн до 102.81 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMT10H010LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
на замовлення 127130 шт: термін постачання 21-31 дні (днів) |
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DMT10H010LSS-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS |
на замовлення 4851 шт: термін постачання 21-30 дні (днів) |
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DMT10H010LSS-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R |
товар відсутній |
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DMT10H010LSS-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R |
товар відсутній |
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DMT10H010LSS-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R |
товар відсутній |
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DMT10H010LSS-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R |
товар відсутній |
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DMT10H010LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 14.5mΩ Drain current: 9.2A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A кількість в упаковці: 2500 шт |
товар відсутній |
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DMT10H010LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.2A; Idm: 75A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 14.5mΩ Drain current: 9.2A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A |
товар відсутній |