DMT10H015LCG-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.06 грн |
| 6000+ | 23.9 грн |
| 9000+ | 22.8 грн |
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Технічний опис DMT10H015LCG-13 Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: V-DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V.
Інші пропозиції DMT10H015LCG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMT10H015LCG-13 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R |
товар відсутній |
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DMT10H015LCG-13 | Виробник : Diodes Zetex |
Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R |
товар відсутній |
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DMT10H015LCG-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 100V 9.4A 8-Pin VDFN EP T/R |
товар відсутній |
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| DMT10H015LCG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A кількість в упаковці: 3000 шт |
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DMT10H015LCG-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V |
товар відсутній |
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| DMT10H015LCG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 54A; 2.1W Mounting: SMD Case: V-DFN3333-8 Type of transistor: N-MOSFET On-state resistance: 26mΩ Drain current: 7.5A Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A |
товар відсутній |