DMT10H025SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 7.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Description: MOSFET N-CH 100V 7.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 15.63 грн |
5000+ | 14.25 грн |
12500+ | 13.2 грн |
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Технічний опис DMT10H025SSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 7.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V.
Інші пропозиції DMT10H025SSS-13 за ціною від 14.49 грн до 44.94 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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DMT10H025SSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 100V 7.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V |
на замовлення 13660 шт: термін постачання 21-31 дні (днів) |
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DMT10H025SSS-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V |
на замовлення 7400 шт: термін постачання 21-30 дні (днів) |
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DMT10H025SSS-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 100V 7.4A 8-Pin SO T/R |
товар відсутній |
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DMT10H025SSS-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 100V 7.4A 8-Pin SO T/R |
товар відсутній |
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DMT10H025SSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A кількість в упаковці: 2500 шт |
товар відсутній |
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DMT10H025SSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.9A; Idm: 45A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 5.9A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21.4nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 45A |
товар відсутній |