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DMT15H067SSS-13

DMT15H067SSS-13 Diodes Inc


dmt15h067sss.pdf Виробник: Diodes Inc
Trans MOSFET N-CH 150V 4.5A 8-Pin SO T/R
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Технічний опис DMT15H067SSS-13 Diodes Inc

Description: MOSFET N-CH 150V 4.5A/13A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V.

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DMT15H067SSS-13 DMT15H067SSS-13 Виробник : Diodes Incorporated DMT15H067SSS.pdf Description: MOSFET N-CH 150V 4.5A/13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V
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DMT15H067SSS-13 DMT15H067SSS-13 Виробник : Diodes Incorporated DIOD_S_A0009150351_1-2543175.pdf MOSFET MOSFET BVDSS: 101V-250V SO-8 T&R 2.5K
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