DMT2004UFV-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: reel; tape
Pulsed drain current: 90A
Mounting: SMD
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 53.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 3000 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис DMT2004UFV-13 DIODES INCORPORATED
Description: MOSFET N-CH 24V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.
Інші пропозиції DMT2004UFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMT2004UFV-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
товар відсутній |
|
 |
DMT2004UFV-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
товар відсутній |
|
| DMT2004UFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 24V Drain current: 55A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±12V |
товар відсутній |