DMT3006LFDF-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Box (TB)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.64 грн |
| 6000+ | 10.63 грн |
| 9000+ | 9.87 грн |
| 30000+ | 9.05 грн |
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Технічний опис DMT3006LFDF-7 Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN, Packaging: Tape & Box (TB), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMT3006LFDF-7 за ціною від 9.28 грн до 36.22 грн
| Фото | Назва | Виробник | Інформація |
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DMT3006LFDF-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 14.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 127946 шт: термін постачання 21-31 дні (днів) |
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DMT3006LFDF-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
на замовлення 54769 шт: термін постачання 21-30 дні (днів) |
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| DMT3006LFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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| DMT3006LFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET |
товар відсутній |