Технічний опис DMT3006LFDFQ-7 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W, Mounting: SMD, Power dissipation: 2.1W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 16.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 80A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 12.5A, On-state resistance: 15mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції DMT3006LFDFQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT3006LFDFQ-7 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| DMT3006LFDFQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V U-DFN2020- |
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| DMT3006LFDFQ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K |
товар відсутній |
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| DMT3006LFDFQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET |
товар відсутній |