Технічний опис DMT3006LFG-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W, Mounting: SMD, Power dissipation: 27.8W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 16.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 80A, Case: PowerDI3333-8, Drain-source voltage: 30V, Drain current: 12.8A, On-state resistance: 10mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 3000 шт.
Інші пропозиції DMT3006LFG-13
| Фото | Назва | Виробник | Інформація |
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| DMT3006LFG-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Power dissipation: 27.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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DMT3006LFG-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V PWRDI3333 |
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DMT3006LFG-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
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| DMT3006LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Mounting: SMD Power dissipation: 27.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
товар відсутній |