Технічний опис DMT3009UFVW-7 Diodes Inc
Description: MOSFET N-CH 30V 10.6A/30A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A, Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V, Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V.
Інші пропозиції DMT3009UFVW-7
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| DMT3009UFVW-7 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Mounting: SMD Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 13mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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Type-UX;-;-8.jpg "DMT3009UFVW-7") |
DMT3009UFVW-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 10.6A/30A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V |
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DMT3009UFVW-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K |
товар відсутній |
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| DMT3009UFVW-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Mounting: SMD Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 13mΩ Type of transistor: N-MOSFET |
товар відсутній |