DMT3020LFDB-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
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Технічний опис DMT3020LFDB-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W, Mounting: SMD, Power dissipation: 1.8W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 50A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 6.2A, On-state resistance: 32mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 10000 шт.
Інші пропозиції DMT3020LFDB-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMT3020LFDB-13 | Виробник : Diodes Incorporated | Description: MOSFET 2N-CHA 30V 7.7A DFN2020 |
товар відсутній |
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DMT3020LFDB-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V |
товар відсутній |
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DMT3020LFDB-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET |
товар відсутній |