Технічний опис DMT3020LFDF-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W, Mounting: SMD, Power dissipation: 1.1W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 40A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 5.4A, On-state resistance: 28mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 10000 шт.
Інші пропозиції DMT3020LFDF-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMT3020LFDF-13 | Виробник : Diodes Incorporated |
 Description: MOSFET NCH 30V 8.4A UDFN2020 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| DMT3020LFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET кількість в упаковці: 10000 шт |
товар відсутній |
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| DMT3020LFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
товар відсутній |