DMT3020LFDFQ-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Application: automotive industry
Mounting: SMD
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Application: automotive industry
Mounting: SMD
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис DMT3020LFDFQ-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W, Application: automotive industry, Mounting: SMD, Power dissipation: 0.4W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 40A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 6.7A, On-state resistance: 28mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції DMT3020LFDFQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT3020LFDFQ-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K |
товар відсутній |
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| DMT3020LFDFQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Application: automotive industry Mounting: SMD Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
товар відсутній |