Технічний опис DMT3020UFDB-13 Diodes Inc
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W, Mounting: SMD, Power dissipation: 1.3W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 8.8nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 35A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 5.2A, On-state resistance: 30mΩ, Type of transistor: N-MOSFET x2, кількість в упаковці: 10000 шт.
Інші пропозиції DMT3020UFDB-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT3020UFDB-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 кількість в упаковці: 10000 шт |
товар відсутній |
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| DMT3020UFDB-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K |
товар відсутній |
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| DMT3020UFDB-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |