DMT32M5LFG-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 30.89 грн |
| 6000+ | 28.33 грн |
| 10000+ | 27.02 грн |
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Технічний опис DMT32M5LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMT32M5LFG-7 за ціною від 29.65 грн до 81 грн
| Фото | Назва | Виробник | Інформація |
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DMT32M5LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 29928 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LFG-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
на замовлення 910 шт: термін постачання 21-30 дні (днів) |
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| DMT32M5LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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| DMT32M5LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 350A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |