DMT35M8LDG-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW (Ta), 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type G)
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 27.03 грн |
| 6000+ | 24.79 грн |
| 10000+ | 23.64 грн |
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Технічний опис DMT35M8LDG-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 17A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 980mW (Ta), 2W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type G).
Інші пропозиції DMT35M8LDG-7 за ціною від 25.95 грн до 65 грн
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DMT35M8LDG-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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